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On the Bonding and Electrochemical Performance of Sputter Deposited WO3 Thin Films

Naveen Kumar, K and Shaik, H and Sathish, M and Madhavi, V and Abdul Sattar, S (2020) On the Bonding and Electrochemical Performance of Sputter Deposited WO3 Thin Films. In: 2nd International Conference on Materials Science and Manufacturing Technology 2020, ICMSMT 2020, 9-10 April 2020, Hotel AloftCoimbatore, Tamil Nadu; India.

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Official URL: https://dx.doi.org/10.1088/1757-899X/872/1/012147

Abstract

Tungsten oxide (WO3) thin films have attained a distinct and special place in the field of electrochromism. Therefore, any sort of study towards this material will invariably has lot of importance and technological significance. The films of WO3 were deposited by reactive magnetron sputtering at various partial pressures and annealed at 475C. There is a tremendous change in the bonding characteristics, which eventually shows significant change in the optical and electrochemical behavior. The bandgap of WO3 films is found to be increasing with different oxygen partial pressure. A systematic study of cyclic voltammetry has been done to analyze the electrochemical behavior of WO3 films. Oxidation and reduction peak currents have shown an increasing trend with the oxygen partial pressure. Raman spectroscopy has revealed the improvement in the atomic ordering in WO3 films.

Item Type: Conference Paper
Publication: IOP Conference Series: Materials Science and Engineering
Publisher: Institute of Physics Publishing
Additional Information: cited By 0; Conference of 2nd International Conference on Materials Science and Manufacturing Technology 2020, ICMSMT 2020 ; Conference Date: 9 April 2020 Through 10 April 2020; Conference Code:161397
Department/Centre: Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Date Deposited: 20 Oct 2020 11:50
Last Modified: 20 Oct 2020 11:50
URI: http://eprints.iisc.ac.in/id/eprint/66161

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