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Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors

Pickett, A and Mohapatra, AA and Ray, S and Robledo, C and Ghosh, K and Patil, S and Guha, S (2019) Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors. In: MRS Advances, 4 (31-32). pp. 1793-1800.

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Official URL: https://dx.doi.org/10.1557/adv.2019.298


Hybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2/ZnO interface. Treated ZnO films yield electron mobilities close to 10-2 cm2/Vs and on/off current ratios of 104 while non-treated films have mobilities on the order of 10-5 cm2/Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors. Copyright © Materials Research Society 2019.

Item Type: Journal Article
Publication: MRS Advances
Publisher: Materials Research Society
Additional Information: copy right for this article belongs to Materials Research Society
Keywords: Electron mobility; Field effect transistors; II-VI semiconductors; Magnetic semiconductors; Organic semiconductor materials; organic-inorganic materials; Ozone; Photodetectors; Photons; Semiconductor junctions; Silica; Sol-gel process; Thin film circuits; Thin film transistors; Thin films; Wide band gap semiconductors; Zinc oxide, Field effect transistor (FETs); Hybrid organic-inorganic; Hybrid photo detectors; Mechanical flexibility; N-type organic semiconductor; N-type semiconductors; ON/OFF current ratio; Organic photodetector, Semiconducting zinc compounds
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 20 Oct 2020 11:44
Last Modified: 20 Oct 2020 11:44
URI: http://eprints.iisc.ac.in/id/eprint/65895

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