Copper Iron Sulfide Nanocrystal-Bulk Silicon Heterojunctions for Broadband Photodetection

Sugathan, A and Saigal, N and Rajasekar, GP and Pandey, A (2020) Copper Iron Sulfide Nanocrystal-Bulk Silicon Heterojunctions for Broadband Photodetection. In: Advanced Materials Interfaces, 7 (9).

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Abstract

This study describes the optoelectronic characteristics of CuFeS2/Si nanocrystal/bulk heterojunctions. These heterojunctions show a strong photocurrent response under ambient conditions upon excitation from a wide optical spectrum, from 460 to 2200 nm. The devices comprise of a heterojunction formed between heavily doped n-type silicon (1�100 Ω cm) and copper iron sulfide (CuFeS2) nanocrystal films. Over the spectral range 460�2200 nm the device shows a fast response (20 µs at NIR wavelengths), along with responsivity and detectivity of 4.68 mA W�1 and 5.29 � 109 Jones at 1900 nm wavelength. The photocurrent is further observed to be a nonlinear function of power. These properties of the devices are discussed in terms of a defect filling mechanism. Besides their regular photoresponse described above, the devices also exhibit a slower photothermal response, allowing these to also sense hot objects (450 K; excess 6 mW incident onto the device) within the focal plane, thereby extending the useful sensing range of the devices deeper into the infrared.

Item Type:	Journal Article
Publication:	Advanced Materials Interfaces
Publisher:	Wiley-VCH Verlag
Additional Information:	Copyright for this article belongs to Wiley-VCH Verlag
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	15 Sep 2020 07:55
Last Modified:	15 Sep 2020 07:55
URI:	http://eprints.iisc.ac.in/id/eprint/64976

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