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Origin of visible and near IR upconversion in Yb3+-Tm3+-Er3+ doped BaMgF4 phosphor through energy transfer and cross-relaxation processes

Kore, BP and Kumar, A and Kroon, RE and Terblans, JJ and Swart, HC (2020) Origin of visible and near IR upconversion in Yb3+-Tm3+-Er3+ doped BaMgF4 phosphor through energy transfer and cross-relaxation processes. In: Optical Materials, 99 .

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Official URL: https://dx.doi.org/10.1016/j.optmat.2019.109511

Abstract

Near infrared and green, red emission through upconversion and energy transfer processes in BaMgF4 doped with Yb3+-Tm3+ and Yb3+-Tm3+-Er3+ excited at 980 nm were investigated. The BaMgF4:Yb3+,Tm3+ phosphor showed a dominating UC emission at 800 nm. The origin of this 800 nm emission peak was explored through different possible cross-relaxation processes. The optimized composition of Yb3+ and Tm3+ was further co-doped with Er3+, these compositions also showed dominating 800 nm emission for lower concentrations of Er3+ which was gradually suppressed at higher Er3+ concentration. The enhancement of the visible emission of Er3+ in the BaMgF4:Yb3+,Tm3+,xEr3+ doped phosphor suggests the efficient energy transfer from Yb3+ to Tm3+ and Tm3+ to Er3+. By tuning the concentrations of the dopants, a near white light emission under infrared excitation was also achieved.

Item Type: Journal Article
Publication: Optical Materials
Publisher: Elsevier B.V.
Additional Information: copyright to this article belongs to Elsevier B.V.
Keywords: Barium compounds; Energy transfer; Erbium compounds; Infrared devices; Light emission; Magnesium compounds; Phosphors; Relaxation processes; Thulium compounds; Ytterbium compounds, Cross-relaxation process; Efficient energy transfer; Emission peaks; Energy transfer process; Infrared excitation; Near-white-light emissions; Up-conversion; Visible emissions, Fluorine compounds
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 11 Jun 2020 09:26
Last Modified: 11 Jun 2020 09:26
URI: http://eprints.iisc.ac.in/id/eprint/64596

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