An improved tunnel field-effect transistor with an L-shaped gate and channel

Abraham, N and James, RK (2020) An improved tunnel field-effect transistor with an L-shaped gate and channel. In: Journal of Computational Electronics .

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Abstract

An improved tunnel field-effect transistor with an L-shaped gate and channel (LLTFET) is proposed herein. The new structure shows an increased ON-current without any change in the overall area in comparison with state-of-the-art structures. The L-shaped gate extends into the substrate and overlaps with part of the source. An N+ pocket located just below the gate facilities tunneling in both the horizontal and vertical directions, which results in the increased ON-current. Three different models are proposed herein to increase the ON-current with the added advantage of simplified fabrication steps. For one of the proposed models, the ON-current is improved by 63 while the OFF-current is reduced to 12.5 compared with an L-shaped gate TFET (LGTFET) described in literature. An optimum model is also proposed, achieving a subthreshold swing of 21.2Â mV/decade at 0.05Vgs. The simulations are performed using Silvaco ATLAS with the nonlocal band to band tunneling (BTBT) model.

Item Type:	Journal Article
Publication:	Journal of Computational Electronics
Publisher:	Springer
Additional Information:	copyright of this article belongs to Springer
Keywords:	Transistors, Band to band tunneling; L-shaped; LLTFET; Optimum model; State of the art; Subthreshold swing; TFET; Vertical direction, Tunnel field effect transistors
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	02 Mar 2020 11:18
Last Modified:	02 Mar 2020 11:18
URI:	http://eprints.iisc.ac.in/id/eprint/64535

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