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Nano-second timescale high-field phase transition in hydrogenated amorphous silicon

Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2019) Nano-second timescale high-field phase transition in hydrogenated amorphous silicon. In: JOURNAL OF APPLIED PHYSICS, 126 (13).

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Official URL: http://dx.doi.org/10.1063/1.5099483

Abstract

In this work, we report the phase transition behavior of hydrogenated amorphous silicon on the application of nanosecond timescale high-field pulse electrical stress. The transition of amorphous silicon to nanocrystalline silicon, confirmed through Raman spectroscopy, is marked by an abrupt change in the pulse I-V characteristics. The mechanism of the phase transition at high electric field involving the avalanche generation of charge carriers and optical phonon generation is discussed. The role of defect states in optical phonon localization and eventual phase transition is explored. The phase transition in the case of devices with a drain-gate underlap is also studied. The role of self-heating in accelerating the phase transition has also been explored. The impact of channel dimensions on the onset of the phase transition is also discussed. Characterization of the resultant nc-Si is done through deconvolution of the Raman spectra, and the quality of nc-Si created is found comparable to earlier studies.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to AMER INST PHYSICS
Keywords: THRESHOLD-VOLTAGE SHIFT; CW LASER CRYSTALLIZATION; THIN-FILM TRANSISTORS; A-SIH TFTS; INSTABILITY MECHANISMS; DEPENDENCE
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 28 Nov 2019 10:47
Last Modified: 28 Nov 2019 10:47
URI: http://eprints.iisc.ac.in/id/eprint/63835

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