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Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

Garg, Sahil and Kaushal, Bipan and Kumar, Sanjeev and Kasjoo, Shahrir Rizal and Mahapatra, Santanu and Singh, Arun K (2019) Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 18 . pp. 925-931.

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Official URL: https://dx.doi.org/10.1109/TNANO.2019.2939199

Abstract

In this paper, we have presented the transient analysis of an InGaAs based novel nano diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits current-voltage (I-V) characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage and the output current of the device can be tuned by varying channel width and length, respectively. The charging/discharging time (RC time constants) have been extracted from the I-V characteristics of the device demonstrating almost very small reverse recovery time of the order of 10(-9) s, which significantly affects the device on-off switching. Furthermore, results are validated by implementing the conformal mapping technique to extract device capacitance, which in turn predicts device charging and discharging, and hence, reverse recovery time to enable high frequency operation. Additionally, it is demonstrated that small reverse recovery time enables SSDs to rectify the input signal without requiring additional filter circuitry.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Reverse recovery; Self-switching device (SSD); Storage effect; Switching; Time constant
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 21 Oct 2019 07:30
Last Modified: 21 Oct 2019 07:30
URI: http://eprints.iisc.ac.in/id/eprint/63745

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