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ESD Reliability of AlGaN/GaN HEMT Technology

Shankar, Bhawani and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Reliability of AlGaN/GaN HEMT Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (9). pp. 3756-3763.

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Official URL: https://dx.doi.org/ 10.1109/TED.2019.2926781

Abstract

This experimental study reports new aspects of electrostatic discharge (ESD) behavior in AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test structures. Influenceof piezoelectricfield, carrier trapping, and self-heating on ESD behavior is studied. A unique power-law-like behavior is found. Linear scaling of failure current with source-drain spacing is reported. Spot measured drain-to-source DC current is realized as an important parameter to monitor degradation. Unique degradation trends are observed for the first time and a correlation between snapback depth and % degradation is established. Cumulative nature of device degradation is discovered. Change from soft to hard failure with an increase in pulsewidth (PW) is reported. Finally, the cause of snapback instability observed in device, at low PW, is discussed.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: AlGaN/GaN HEMT; degradation; electrostatic discharge (ESD) behavior; power law; snapback instability
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 20 Nov 2019 06:04
Last Modified: 20 Nov 2019 06:04
URI: http://eprints.iisc.ac.in/id/eprint/63584

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