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First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs

Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.

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Official URL: https://dx.doi.org/10.1109/TED.2019.2919491

Abstract

This paper reports the very first systematic study on the physics of avalanche instability and safe operating area (SOA) reliability in AlGaN/GaN high-electron-mobility transistor (HEMT) using submicroseconds pulse characterization, poststress degradation analysis, well-calibrated TCAD simulations, and failure analysis by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Impacts of electrical and thermal effects on SOA boundary and avalanche instability are investigated. Trap-induced cumulative nature of degradation is studied in detail. The root cause for avalanche instability in AlGaN/GaN HEMTs is investigated. Postfailure SEM, energy dispersive X-ray (EDX), and TEM analysis reveal distinct failure modes in the presence and absence of carrier trapping.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Avalanche instability; failure modes; Gallium nitride (GaN); high-electron-mobility transistor (HEMT); safe operating area (SOA); trapping
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 03 Sep 2019 10:33
Last Modified: 03 Sep 2019 10:33
URI: http://eprints.iisc.ac.in/id/eprint/63456

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