A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing

Paul, Tathagata and Ahmed, Tanweer and Tiwari, Krishna Kanhaiya and Thakur, Chetan Singh and Ghosh, Arindam (2019) A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing. In: 2D MATERIALS, 6 (4).

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Abstract

As one of the most important members of the two dimensional chalcogenide family, molybdenum disulphide (MoS2) has played a fundamental role in the advancement of low dimensional electronic, optoelectronic and piezoelectric designs. Here, we demonstrate a new approach to solid state synaptic transistors using two dimensional MoS2 floating gate memories. By using an extended floating gate architecture which allows the device to be operated at near-ideal subthreshold swing of 77 mV/decade over four decades of drain current, we have realised a charge tunneling based synaptic memory with performance comparable to the state of the art in neuromorphic designs. The device successfully demonstrates various features of a biological synapse, including pulsed potentiation and relaxation of channel conductance, as well as spike time dependent plasticity (STDP). Our device returns excellent energy efficiency figures and provides a robust platform based on ultrathin two dimensional nanosheets for future neuromorphic applications.

Item Type:	Journal Article
Publication:	2D MATERIALS
Publisher:	IOP PUBLISHING LTD
Additional Information:	copyright for this article belongs to IOP PUBLISHING LTD
Keywords:	molybdenum disulphide; synaptic transistors; floating gate memories; van der Waals heterostructure; neuromorphic computing
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics
Date Deposited:	21 Aug 2019 06:43
Last Modified:	21 Aug 2019 06:43
URI:	http://eprints.iisc.ac.in/id/eprint/63281

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