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ESD Behavior of AlGaN/GaN Schottky Diodes

Shankar, Bhawani and Gupta, Sayak Dutta and Soni, Ankit and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Behavior of AlGaN/GaN Schottky Diodes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 19 (2). pp. 437-444.

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Official URL: https://dx.doi.org/10.1109/TDMR.2019.2916846

Abstract

This experimental study reports behavior of Ni/Au-based AlGaN/GaN Schottky diodes under ESD conditions. A comparative study of diodes with/without recessed Schottky contact unfolds different degradation physics in each case. The impact of different current conduction mechanisms, device degradation and trap generation on its robustness are analyzed. The role of interface traps under ESD failure of the GaN Schottky diode is investigated. The transition from soft-to-hard failure, which is found to depend on the presence of traps, and diode design is discussed. New insights into degradation trends, cumulative nature of degradation, and trap-assisted failure modes are discovered.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Electrostatic discharge; gallium nitride (GaN); Schottky diode; trapping; failure modes
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 01 Aug 2019 06:41
Last Modified: 01 Aug 2019 06:41
URI: http://eprints.iisc.ac.in/id/eprint/63136

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