ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal-insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range

Reddy, Nallabala Nanda Kumar and Godavarthi, Srinivas and Kumar, Kesarla Mohan and Kummara, Venkata Krishnaiah and Vattikuti, SV Prabhakar and Akkera, Harish Sharma and Bitla, Yugandhar and Jilani, SAK and Manjunath, V (2019) Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal-insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 30 (9). pp. 8955-8966.

[img] PDF
Jou_Mat_Sci_Mat_Ele_30_9_8955-8966_2019.pdf - Published Version
Restricted to Registered users only

Download (3MB) | Request a copy
Official URL: https://doi.org/10.1007/s10854-019-01223-1

Abstract

In this manuscript, we reported the electrical characteristics and structural analysis of In/Fe3O4/SiO2/n-Si/In MIS-type SBD heterostructure comprehensively in the temperature range 10-300K using I-V, XRD, TEM and AFM measurements. Pulsed laser deposition in association with DC magnetron sputtering techniques has been utilized to fabricate the proposed In/Fe3O4/SiO2/n-Si/In heterojunction. The fabricated heterojunction revealed that the I-V curves are non-linear and asymmetric in nature. Using these I-V curves in the forward-bias region, SBH is calculated as 0.02eV at 10K and 0.74eV at 300K. On the other hand, the ideality factor (n) value was calculated as 7.55 at 10K and 1.37 at 300K. The series resistance (R-S) values were also evaluated using Chenug's method and the values were 1121 at 10K and 334 at 300K. The dependence of important diode parameters such as SBH, n' and R-S' on measurement temperature was effectively explained firstly on account of triple Gaussian distribution of barrier heights with the help of barrier inhomogeneities of the prepared heterojunction. The value of the Richardson's constant calculated for the fabricated In/Fe3O4/SiO2/n-Si/In heterojunction in the 110-300K temperature regime was calculated to be 115.26A/cm(2)K(2) and is approximately equal to the theoretical value of 120A/cm(2)K(2) for n-type Si. In addition, the higher value (greater than one) of ideality factor at all operating temperatures from 10-300K demonstrated that the probable current transport across the Fe3O4/SiO2/n-Si junction is not only due to the thermionic emission (TE) mechanism. Hence, to reveal the origin of current transport mechanism i.e., other than TE, we noticed that the governing current transport process through the fabricated hetrojunction is mainly due to the tunneling assisted Poole-Frenkel class of emission across the Fe3O4/SiO2/n-Si junction which is found to be temperature-dependent.

Item Type: Journal Article
Additional Information: copyright for this article belongs to JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 24 Jun 2019 17:10
Last Modified: 24 Jun 2019 17:11
URI: http://eprints.iisc.ac.in/id/eprint/63077

Actions (login required)

View Item View Item