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Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts

Nandanapalli, Koteeswara Reddy and Mudusu, Devika and Reddy, Gunasekhar K (2019) Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts. In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 100 . pp. 192-199.

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Official URL: https://doi.org/10.1016/j.mssp.2019.05.001

Abstract

Eco-friendly and efficient rectifying p-n diodes have been developed by using cost-effective and non-toxic fin monosulfide (SnS) thin films. Chemically stoichiometric fin monosulfide (SnS) thin films followed by titanium/gold (Ti/Au) bilayer contacts were deposited on Si substrates and then, the structures were treated by rapid thermal annealing process (RTP) at different temperatures. The impact of RTP treatment on the surface morphology and chemical composition of Ti/Au contacts and SnS films along with their electrical characteristics were investigated. The electrical measurements show that as compared to untreated Si/SnS/Ti/Au structures, the heat-treated structures typically at 200 degrees C possess low electrical resistivity and contact resistance of similar to 3 x 10(-2) Omega cm and similar to 11 k Omega, respectively. Heterojunction formed between p-SnS and n-Si exhibited excellent diode characteristics and possess a high current flow in the order of milliamperes, and excellent rectification factor of 1177@ 5 V.

Item Type: Journal Article
Additional Information: copyright for this article belongs to Elsevier Ltd
Keywords: Absorber materials; SnS films; Low-resistive contacts; Metallization; Heterojunction devices
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 09 Jul 2019 07:36
Last Modified: 09 Jul 2019 07:36
URI: http://eprints.iisc.ac.in/id/eprint/63022

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