Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.
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Abstract
This experimental study reports a systematic investigation of Safe Operating Area limits in AlGaN/GaN HEMT using sub-mu s pulse characterization with on the fly Raman and CV characterization to probe defect and stress evolution across the device. Influence of a recess depth on SOA boundary is analyzed. Post failure analysis corroborates well with the failure physics unveiled in this work.
| Item Type: | Conference Proceedings |
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| Series.: | International Reliability Physics Symposium |
| Publisher: | IEEE |
| Additional Information: | IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, MAR 11-15, 2018 |
| Keywords: | GaN HEMT; Safe Operating Area; Stress; Trap |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports |
| Date Deposited: | 20 Jun 2019 18:36 |
| Last Modified: | 21 Jun 2019 07:26 |
| URI: | http://eprints.iisc.ac.in/id/eprint/63006 |
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