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On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs

Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.

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Official URL: https://doi.org/10.1109/IRPS.2018.8353596

Abstract

This experimental study reports a systematic investigation of Safe Operating Area limits in AlGaN/GaN HEMT using sub-mu s pulse characterization with on the fly Raman and CV characterization to probe defect and stress evolution across the device. Influence of a recess depth on SOA boundary is analyzed. Post failure analysis corroborates well with the failure physics unveiled in this work.

Item Type: Conference Proceedings
Additional Information: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, MAR 11-15, 2018
Keywords: GaN HEMT; Safe Operating Area; Stress; Trap
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports
Depositing User: Id for Latest eprints
Date Deposited: 20 Jun 2019 18:36
Last Modified: 21 Jun 2019 07:26
URI: http://eprints.iisc.ac.in/id/eprint/63006

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