ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator

Aparimita, Adyasha and Sripan, C and Ganesan, R and Naik, R (2019) Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator. In: OPTICAL MATERIALS, 89 . pp. 157-163.

[img] PDF
Opt_Mat_89_157-163_2019.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: https://dx.doi.org/10.1016/j.optmat.2019.01.043

Abstract

In the present paper, we report the evolution of Bi2Se3 topological phase from the Bi diffusion into GeSe(2 )layer in the Bi/GeSe(2 )hetero junction film with light and thermal energy. The photo and thermal induced changes in the structural and optical properties of thermally evaporated Bi/GeSe2 bilayer film has been studied by various characterization techniques. The amorphous to crystalline phase transition and the formation of Bi2Se3 topological phase was confirmed from the X-ray diffraction analysis. The deposition as well as diffusion of Bi into GeSe2 layer changed the optical constants like transmitivity, absorption power, optical band gap, Urbach energy, Tauc parameter as studied from UV-Vis-NIR spectroscopy. The transmission power decreased after thermal annealing and laser irradiation where the reverse effect was found in case of absorption coefficient. The optical band gap decreased after diffusion which can be explained on the basis of density of defect states with an increase in disorder. Scanning electron microscopy investigations showed that the surface morphology was influenced by the diffusion phenomena. The Raman analysis also confirms the Bi(2)Se(3 )phase evolution with appropriate vibrational peaks. The modifications in optical parameters with thermal and light induced diffusion can be used in various optical applications using such metal/chalcogenides heterojunction layers.

Item Type: Journal Article
Additional Information: copyright for this article belongs to ELSEVIER SCIENCE BV
Keywords: Amorphous materials; Chalcogenides; Thin films; Bi2Se3 phase; Optical properties; Band gap
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 06 Aug 2019 09:38
Last Modified: 06 Aug 2019 09:38
URI: http://eprints.iisc.ac.in/id/eprint/62892

Actions (login required)

View Item View Item