ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.

[img] PDF
ISPSD_2018.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://doi.org/10.1109/ISPSD.2018.8393605

Abstract

In this paper1, Drain extended FinFET device design and the challenges associated with the performance and reliability are discussed. Physical insights into the performance vs. reliability trade-off for the Fin enabled high voltage designs is elaborated and compared with their planar counterpart (DeMOS). Effect of Fin width discretization over ESD reliability, Safe Operating Area and HCI reliability are discussed.

Item Type: Conference Proceedings
Additional Information: Copyright for this proceeding article belongs to IEEE
Keywords: Drain Extended; ESD; finFET; HCI; reliability; Safe Operating Area
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: LIS Interns
Date Deposited: 24 May 2019 10:05
Last Modified: 24 May 2019 10:05
URI: http://eprints.iisc.ac.in/id/eprint/62759

Actions (login required)

View Item View Item