Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.
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Abstract
In this paper1, Drain extended FinFET device design and the challenges associated with the performance and reliability are discussed. Physical insights into the performance vs. reliability trade-off for the Fin enabled high voltage designs is elaborated and compared with their planar counterpart (DeMOS). Effect of Fin width discretization over ESD reliability, Safe Operating Area and HCI reliability are discussed.
Item Type: | Conference Proceedings |
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Series.: | International Symposium on Power Semiconductor Devices & ICs |
Publisher: | IEEEMinistry of Human Resource and Development. Government of India |
Additional Information: | Copyright for this proceeding article belongs to IEEE |
Keywords: | Drain Extended; ESD; finFET; HCI; reliability; Safe Operating Area |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 24 May 2019 10:05 |
Last Modified: | 24 May 2019 10:05 |
URI: | http://eprints.iisc.ac.in/id/eprint/62759 |
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