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Impact of positions of sensing area in ahannel of dielectric modulated MOSFET based biosensor

Ajay, Ajay and Narang, Rakhi and Saxena, Manoj and Gupta, Mridula (2018) Impact of positions of sensing area in ahannel of dielectric modulated MOSFET based biosensor. In: INTEGRATED FERROELECTRICS, 194 (1, SI). pp. 63-71.

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Official URL: https://doi.org/10.1080/10584587.2018.1514892

Abstract

In this work, a gate underlap channel dielectric-modulated (DM) double-gate (DG) MOSFET which is working as biosensor for the label free electrical detection of the biomolecules has been investigated. The electrical characteristics such as, threshold voltage and drain current of DM DG MOSFET have been studied by the device simulation. The shift in the threshold voltage has been used as the sensing metric to detect the sensitivity after the biomolecules interacts with the device. four-gate NMOS inverter has also been used to investigate a label free electrical detection of the biomolecules. The work has been done under the consideration of dry environment condition.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to TAYLOR & FRANCIS LTD
Keywords: Biosensor; dielectric modulation (DM); NMOS inverter; TCAD
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: LIS Interns
Date Deposited: 24 May 2019 09:32
Last Modified: 27 May 2019 04:56
URI: http://eprints.iisc.ac.in/id/eprint/62752

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