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The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

Samanta, Chandan and Arora, Nishta and Kumar, Kranthi and Raghavan, Srinivasan and Naik, AK (2019) The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator. In: NANOSCALE, 11 (17). pp. 8394-8401.

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Official URL: https://doi.org/10.1039/c8nr10452b


We demonstrate all electrical measurements on NEMS devices fabricated using CVD grown monolayer MoS2. The as-grown monolayer film of MoS2 on top of the SiO2/Si wafer is processed to fabricate arrays and individual NEMS devices without the complex pick and transfer techniques associated with graphene. The electromechanical properties of the devices are on par with those fabricated using the exfoliation method. The frequency response of these devices is then used as a probe to estimate the linear thermal expansion coefficient of the material and evaluate the effect of strain on the effective Duffing nonlinearity in the devices.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to ROYAL SOC CHEMISTRY
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: LIS Interns
Date Deposited: 23 May 2019 07:05
Last Modified: 23 May 2019 07:05
URI: http://eprints.iisc.ac.in/id/eprint/62723

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