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Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si

Kumar, Sandeep and Kumar, Himanshu and Vura, Sandeep and Pratiyush, Anamika Singh and Charan, Vanjari Sai and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (3). pp. 1230-1235.

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Official URL: http://dx.doi.org/10.1109/TED.2019.2893288

Abstract

We report on the demonstration and investigation of Ta2O5 as high-k dielectric for InAlN/GaN-MOS high-electron mobility transistor (HEMT)-on-Si. Ta2O5 of thickness 24 nm and dielectric constant similar to 30 was sputter deposited on InAlN/GaN HEMT and was investigated for different post deposition anneal (PDA) conditions. The gate leakage was 16 nA/mm at -15 V which was similar to five orders of magnitude lower compared to reference HEMT. The 2-D electron gas (2-DEG) density was found to vary with annealing temperature suggesting the presence of net charge at the Ta2O5/InAlN interface. Dispersion in the capacitance-voltage (C-V) characteristics was used to estimate the frequency-dependent interface charge, while energy band diagrams under flat band conditions were investigated to estimate fixed charge. The optimum anneal condition was found to be 500 degrees C which has resulted into a flat band voltage spread (Delta V-FB) of 0.4 V and interface fix charge (Q(f)) of 3.98 x 10(13) cm(-2). X-ray photoelectron spectroscopy spectra of as-deposited and annealed Ta2O5 film were analyzed for Ta and O compositions in the film. The sample annealed at 500 degrees C has shown Ta:O ratio of 0.41. X-ray diffraction analysis was done to check the crystallization of amorphous Ta2O5 film at higher annealing temperatures.

Item Type: Journal Article
Additional Information: Copyright belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: 2-D electron gas (2-DEG);capacitance-voltage (C-V);high-electron mobility transistor (HEMT);high-k; Ta2O5
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 23 Apr 2019 04:48
Last Modified: 06 May 2019 07:18
URI: http://eprints.iisc.ac.in/id/eprint/62490

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