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Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET

Ajay, Ajay and Narang, Rakhi and Saxena, Manoj and Gupta, Mridula (2019) Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET. In: IEEE SENSORS JOURNAL, 19 (7). pp. 2605-2612.

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Official URL: https://doi.org/10.1109/JSEN.2018.2887277


This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage, and drain current. Analytical modeling scheme relates to the exact resultant solution of the two-dimensional Poisson equation. The shift in the threshold voltage has been considered as the sensing parameter to detect the sensitivity when the biomolecules are immobilized in the cavity region.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Bio-sensor; dielectric modulation; gate all around tunnel FET (GAA-TFET); hetero junction (HJ); model
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 20 May 2019 06:12
Last Modified: 20 May 2019 06:12
URI: http://eprints.iisc.ac.in/id/eprint/62396

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