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Topological insulator n-p-n junctions in a magnetic field

Banerjee, A and Sundaresh, A and Biswas, S and Ganesan, R and Sen, D and Anil Kumar, PS (2019) Topological insulator n-p-n junctions in a magnetic field. In: Nanoscale, 11 (12). pp. 5317-5324.

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Official URL: https://doi.org/10.1039/c8nr10306b


Electrical transport in three dimensional topological insulators (TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into Landau levels giving rise to chiral edge states that are naturally spin-polarized due to spin momentum locking. It has been proposed that p-n junctions of TIs exposed to external magnetic fields can manifest unique spin dependent effects, apart from forming basic building blocks for highly functional spintronic devices. Here, for the first time we study electrostatically defined n-p-n junctions of dual-gated devices of the three dimensional topological insulator BiSbTe 1.25 Se 1.75 in the presence of a strong magnetic field, revealing striking signatures of suppressed or enhanced electrical transport depending upon the chirality of quantum Hall edge states created at the n-p and p-n junction interfaces. Theoretical modeling combining the electrostatics of the dual gated TI n-p-n junction with the Landauer Buttiker formalism for transport through a network of chiral edge states explains our experimental data. Our work not only opens up a route towards exotic spintronic devices but also provides a test bed for investigating the unique signatures of quantum Hall effects in topological insulators. © The Royal Society of Chemistry.

Item Type: Journal Article
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Keywords: Antimony compounds; Bismuth compounds; Electric insulators; Hall effect devices; Interface states; Locks (fasteners); Quantum chemistry; Quantum theory; Selenium compounds; Semiconductor junctions; Surface states; Tellurium compounds; Topological insulators, Basic building block; Electrical transport; External magnetic field; Spin-dependent effects; Spin-polarized; Spintronic device; Strong magnetic fields; Theoretical modeling, Quantum Hall effect
Department/Centre: Division of Physical & Mathematical Sciences > Centre for High Energy Physics
Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 06 May 2019 17:25
Last Modified: 06 May 2019 17:25
URI: http://eprints.iisc.ac.in/id/eprint/62215

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