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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector

Chowdhury, A.M. and Chandan, G. and Pant, R. and Roul, B. and Singh, D.K. and Nanda, K.K. and Krupanidhi, S.B. (2019) Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector. In: ACS Applied Materials and Interfaces, 11 (10). pp. 10418-10425.

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Official URL: https://dx.doi.org/10.1021/acsami.8b22569

Abstract

A self-powered, broad band and ultrafast photodetector based on n + -InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n + type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n + -InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm 2 ), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized.

Item Type: Journal Article
Additional Information: The copyright for this article belongs to American Chemical Society
Keywords: Aluminum nitride; Gallium alloys; Gallium nitride; Heterojunctions; III-V semiconductors; Indium alloys; Indium compounds; Interface states; Molecular beam epitaxy; Molecular beams; Open circuit voltage; Photodetectors; Photons; Semiconductor alloys, Broad bands; Indium gallium nitride; InGaN epilayers; Light illumination; Photoresponses; Plasma assisted molecular beam epitaxy; Self-powered; Si(111) substrate, Nitrogen compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 11 Apr 2019 11:15
Last Modified: 11 Apr 2019 11:15
URI: http://eprints.iisc.ac.in/id/eprint/62067

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