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Reversible defect engineering in graphene grain boundaries

Balasubramanian, K and Biswas, T and Ghosh, P and Suran, S and Mishra, A and Mishra, R and Sachan, R and Jain, M and Varma, M and Pratap, R and Raghavan, S (2019) Reversible defect engineering in graphene grain boundaries. In: Nature Communications, 10 (1).

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Official URL: https://dx.doi.org/10.1038/s41467-019-09000-8

Abstract

Research efforts in large area graphene synthesis have been focused on increasing grain size. Here, it is shown that, beyond 1 μm grain size, grain boundary engineering determines the electronic properties of the monolayer. It is established by chemical vapor deposition experiments and first-principle calculations that there is a thermodynamic correlation between the vapor phase chemistry and carbon potential at grain boundaries and triple junctions. As a result, boundary formation can be controlled, and well-formed boundaries can be intentionally made defective, reversibly. In 100 µm long channels this aspect is demonstrated by reversibly changing room temperature electronic mobilities from 1000 to 20,000 cm 2 V �1 s �1 . Water permeation experiments show that changes are localized to grain boundaries. Electron microscopy is further used to correlate the global vapor phase conditions and the boundary defect types. Such thermodynamic control is essential to enable consistent growth and control of two-dimensional layer properties over large areas. © 2019, The Author(s).

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Nature Publishing Group
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 09 Apr 2019 06:39
Last Modified: 09 Apr 2019 06:39
URI: http://eprints.iisc.ac.in/id/eprint/62052

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