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Highly responsive ZnO/AlN/Si heterostructure-based infrared- and visible-blind ultraviolet photodetectors with high rejection ratio

Roul, B and Pant, R and Chowdhury, AM and Chandan, G and Singh, DK and Chirakkara, S and Nanda, KK and Krupanidhi, SB (2019) Highly responsive ZnO/AlN/Si heterostructure-based infrared- and visible-blind ultraviolet photodetectors with high rejection ratio. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1345-1352.

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Official URL: https://dx.doi.org/10.1109/TED.2019.2892133

Abstract

We report on the hybrid ZnO/AIN/Si heterostructure-based ultraviolet (UV) photodetectors with infrared- and visible-blind characteristics. The heterostructure was formed by depositing ZnO thin films on Si (111) substrate by introducing an AIN as an intermediate layer. The ZnO film has been grown epitaxially on the underlying substrate with the improved crystallinity and excellent optical properties. The vertical transport properties of the ZnO/AIN/Si heterojunction under dark and light illumination demonstrate the intrinsic infrared- and visible-blind characteristics with excellent ultraviolet responsivity. The heterostructure exhibits a high UV responsivity of 14.5 A/W with UV-to-lnfrared rejection ratio of nearly 4 orders of magnitude. The vertical electrical transport properties across the heterostructure are dominated by the holes in the reverse bias condition, whereas the transport of electrons in the forward bias is hindered at the ZnO/AIN interface due to an existence of huge conduction band offset between ZnO and AIN layers. The AIN intermediate layer acts as an electron blocking layer which allows the hole to transport across the heterostructure in the reverse bias condition. © 2019 IEEE.

Item Type: Journal Article
Additional Information: copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Crystallinity; Heterojunctions; II-VI semiconductors; Metallic films; Optical films; Optical properties; Photodetectors; Photons; Pulsed laser deposition; Semiconductor quantum wells; Thin films; Transport properties; X ray diffraction analysis, High-resolution x-ray diffraction; Responsivity; Ultra-violet; Visible blind; ZnO thin film, Zinc oxide
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 08 Apr 2019 11:21
Last Modified: 08 Apr 2019 11:21
URI: http://eprints.iisc.ac.in/id/eprint/62001

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