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Critical investigation on Cu-O bonding configuration variation in copper-oxide thin films for low-cost solar cell applications

Sathish, * and Rafi, SM and Shaik, H and Madhavi, P and Kosuri, YR and Sattar, SA and Kumar, KN (2019) Critical investigation on Cu-O bonding configuration variation in copper-oxide thin films for low-cost solar cell applications. In: Materials Science in Semiconductor Processing, 96 . pp. 127-131.

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The present work provides a detailed investigation on how Copper-Oxygen bonding configuration varies with the plasma processing parameters. XRD, FTIR, XPS and Raman spectroscopy is extensively used to identify and study the phases and phase changes in the films. The Copper-Oxygen bonding configuration was altered by varying the RF power and substrate temperature. We studied the combined effect of both RF power and substrate temperature on the Cu-O bonding configuration, which in turn affects the optical and electrical properties, which are essential to understand before the device fabrication. Films were deposited with 40, 60 and 80 W of RF power at the different growth temperatures such as RT(room temperature), 200 °C and 400 °C. Even the RT deposited films were found to be exhibiting the crystalline nature to the maximum extent. We observed a wide range of variation in the Cu-O bonding configurations with the RF power and growth temperature. Films deposited at 80 W are leaning towards Cu 2 O phase, whereas films deposited with 40 W is close to CuO phase. Also it is found that, for a fixed power, the films deposited at high substrate temperature are leaning towards Cu 2 O Phase. © 2019 Elsevier Ltd

Item Type: Journal Article
Publication: Materials Science in Semiconductor Processing
Additional Information: cited By 0
Keywords: Bonding; Costs; Fourier transform infrared spectroscopy; Growth temperature; Oxide films; Oxygen; Solar cells; Sputtering; Substrates; Thin films, Bonding configurations; Copper oxide thin films; FTIR; High substrate temperature; Optical and electrical properties; Oxygen bonding configurations; Plasma processing parameters; Raman, Copper oxides
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 26 Mar 2019 07:51
Last Modified: 26 Mar 2019 07:51
URI: http://eprints.iisc.ac.in/id/eprint/61984

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