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Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor

Mukhokosi, Emma P and Roul, Basanta and Krupanidhi, Saluru B and Nanda, Karuna K (2019) Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor. In: ACS APPLIED MATERIALS & INTERFACES, 11 (6). pp. 6184-6194.

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Official URL: https://doi.org/10.1021/acsami.8b16635

Abstract

In photodetection, the response time is mainly controlled by the device architecture and electron/hole mobility, while the absorption coefficient and the effective separation of the electrons/holes are the key parameters for high responsivity. Here, we report an approach toward the fast and highly responsive infrared photodetection using an n-type SnSe2 thin film on a p-Si(100) substrate keeping the overall performance of the device. The I-V characteristics of the device show a rectification ratio of similar to 147 at +/- 5 V and enhanced optoelectronic properties under 1064 nm radiation. The responsivity is 0.12 A/W at 5 V, and the response/recovery time constants were estimated as similar to 57 +/- 25/34 +/- 15 mu s, respectively. Overall, the response times are shown to be controlled by the mobility of the constituent semiconductors of a photodiode. Further, our findings suggest that n-SnSe2 can be integrated with well-established Si technology with enhanced optoelectronic properties and also pave the way in the design of fast response photodetectors for other wavelengths as well.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to AMER CHEMICAL SOC
Keywords: dc sputtering; selenisation; mobility; SnSe2; IR-photodiode
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Id for Latest eprints
Date Deposited: 26 Mar 2019 07:48
Last Modified: 26 Mar 2019 07:48
URI: http://eprints.iisc.ac.in/id/eprint/61938

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