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Photo and thermally induced properties change in Bi/Ag/Se trilayer thin film

Naik, Ramakanta and Behera, Alok Kumar and Aparimita, Adyasha and Sripan, C and Ganesan, R (2019) Photo and thermally induced properties change in Bi/Ag/Se trilayer thin film. In: PHASE TRANSITIONS, 92 (1). pp. 65-78.

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Official URL: https://doi.org/10.1080/01411594.2018.1550638

Abstract

In this article, we have demonstrated the optical and structural properties change in Bi/Ag/Se trilayer thin films by the influence of thermal and photon energy. The trilayer films prepared by thermal evaporation technique were annealed and laser irradiated at room temperature. The X-ray diffraction study revealed the Ag2Se phase formation and the surface morphology change is being studied by Field emission scanning electron microscopy. The optical properties of the studied films were characterized by using FTIR spectrophotometer in the wavelength range 400-1200 nm. The reduction of optical band gap by both thermal and laser irradiation is being discussed on the basis of chemical disorderness, defect states and density of localized states in the mobility gap. The Raman shift due to annealing and irradiation supports the changes in the film. The large change in optical band gap in thermal annealing is useful for memory device and waveguide fabrication.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to TAYLOR & FRANCIS LTD
Keywords: Trilayer thin films; optical properties; band gap; annealing; laser irradiation
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 21 Feb 2019 05:04
Last Modified: 21 Feb 2019 05:04
URI: http://eprints.iisc.ac.in/id/eprint/61776

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