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Morphology controlling of < 111 >-3C-SiC films by HMDS flow rate in LCVD

Xu, Qingfang and Tu, Rong and Sun, Qingyun and Yang, Meijun and Li, Qizhong and Zhang, Song and Zhang, Lianmeng and Goto, Takashi and Ohmori, Hitoshi and Shi, Ji and Li, Haiwen and Kosinova, Marina and Bikramjit, Basu (2019) Morphology controlling of < 111 >-3C-SiC films by HMDS flow rate in LCVD. In: RSC ADVANCES, 9 (5). pp. 2426-2430.

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Official URL: https://doi.org/10.1039/c8ra09509d

Abstract

Morphology of < 111 >-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 x 10(8) mm(-2). The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to ROYAL SOC CHEMISTRY
Department/Centre: Division of Interdisciplinary Research > Centre for Biosystems Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 20 Feb 2019 05:02
Last Modified: 20 Feb 2019 05:02
URI: http://eprints.iisc.ac.in/id/eprint/61770

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