Quadratic to linear magnetoresistance tuning in TmB4

Mitra, Sreemanta and Kang, Jeremy Goh Swee and Shin, John and Ng, Quan Jin and Sunku, Swaroop Sai and Kong, Tai and Canfield, Paul C and Shastry, Sriram B and Sengupta, Pinaki and Panagopoulos, Christos (2019) Quadratic to linear magnetoresistance tuning in TmB4. In: PHYSICAL REVIEW B, 99 (4).

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Abstract

The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, and two dimensional electron gas, show positive, nonsaturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle-dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive, and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature independent, suggestive of quantum mechanical origin.

Item Type:	Journal Article
Publication:	PHYSICAL REVIEW B
Publisher:	AMER PHYSICAL SOC
Additional Information:	Copyright of this article belongs to AMER PHYSICAL SOC
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Feb 2019 05:48
Last Modified:	06 Feb 2019 05:48
URI:	http://eprints.iisc.ac.in/id/eprint/61590

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