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Bulk and few-layer MnPS3: a new candidate for field effect transistors and UV photodetectors

Kumar, Rajat and Jenjeti, Ramesh Naidu and Austeria, Muthu P and Sampath, S (2019) Bulk and few-layer MnPS3: a new candidate for field effect transistors and UV photodetectors. In: JOURNAL OF MATERIALS CHEMISTRY C, 7 (2). pp. 324-329.

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Official URL: https://doi.org/10.1039/c8tc05011b

Abstract

Layered metal thiophosphates with the general formula MPX3 (M is a group VI element and X is a chalcogen) have been emerging as a novel group of tunable bandgap semiconductors. Herein, we report the synthesis of high quality MnPS3 crystals, and their mechanical exfoliation onto pre-fabricated devices. The use of atomic force microscopy and Raman spectroscopy yielded information on the number of layers. MnPS3-based field effect transistors (FETs) comprising few-layer and bulk crystals with gold contacts show p-type conductivity with an on-off ratio of approximate to 10(3). Temperature dependent electrical transport measurements yield a Schottky barrier height value of 0.34 eV for few-layer devices. FETs based on multilayer and bulk MnPS3 show very similar transport characteristics. The transistor devices have also been shown to be good ultraviolet photodetectors with photoresponsivity of 288 A W-1 at a wavelength of 365 nm. Density functional theory calculations reveal the parameters that affect the viability of electron/hole doping in MnPS3 and help understand the p-type nature of the FET device.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to ROYAL SOC CHEMISTRY
Department/Centre: Division of Chemical Sciences > Inorganic & Physical Chemistry
Depositing User: Id for Latest eprints
Date Deposited: 06 Feb 2019 05:08
Last Modified: 06 Feb 2019 05:08
URI: http://eprints.iisc.ac.in/id/eprint/61584

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