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Infrared (IR) photo-resistors based on re-crystallized amorphous germanium films on silicon using liquid phase epitaxy

Chaurasia, Saloni and Cnatterjee, Avijit and Selvaraja, Shankar and Avasthi, Sushobhan (2018) Infrared (IR) photo-resistors based on re-crystallized amorphous germanium films on silicon using liquid phase epitaxy. In: OPTICAL SENSING AND DETECTION V, 10680 .

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Official URL: https://doi.org/10.1117/12.2319148

Abstract

In this work a heterogeneously integrated germanium (Ge) NIR photo-resistor fabricated on CMOS-compatible silicon substrates is presented. The resistor is fabricated on an epitaxial germanium films grown on silicon using a novel liquid phase crystallization (LPC) process. First, silicon wafers were coated with amorphous germanium deposited using PECVD. Next, Ge film is crystallized into epitaxial germanium using a thermal anneal cycle during which Ge undergoes melting and controlled cooling. The LPE Ge films is polycrystalline but epitaxial with threading dislocation density of similar to 10(9) cm(-2). On the LPE germanium, NIR photo-resistors were fabricated with metal-semiconductor-metal (MSM) inter-digitated structure with an active area of 150 mu m x 300 mu m. Responsivity of the devices was characterized using a fiber laser, tunable from 1500 to 1600 nm. With 1550 nm excitation, a photocurrent of 100 mu m was measured at a bias of 4V with laser power of 25 mW, corresponding to a responsivity of 4 mA/W.

Item Type: Journal Article
Additional Information: Conference on Optical Sensing and Detection V, Strasbourg, FRANCE, APR 23-26, 2018
Keywords: Germanium; epitaxy; silicon; liquid phase crystallization; IR photo-resistors
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Francis Jayakanth
Date Deposited: 24 Jan 2019 11:35
Last Modified: 24 Jan 2019 11:35
URI: http://eprints.iisc.ac.in/id/eprint/61414

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