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Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.

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Official URL: http://dx.doi.org/10.1109/TED.2018.2869630

Abstract

This paper presents the detailed physical insights into the silicon-controlled rectifier (SCR) phenomena in planar equivalent Fin SCR devices. The complexity and roadblocks for SCR triggering in FinFET technology are explored. Implication of contact silicidation on Fin SCR turn-oN is discussed in detail. Device design approaches are discussed for efficient Fin-enabled SCRs. In this direction, a novel contact engineering scheme in Fin technology is disclosed for improved SCR action. Moreover, a novel Fin SCR is presented, which offers area-efficient electrostatic discharge current carrying capability.

Item Type: Journal Article
Additional Information: Copy right for this article belong to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Electrostatic discharge (ESD); FinFET; on chip; silicon-controlled rectifier (SCR)
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 13 Nov 2018 15:25
Last Modified: 13 Nov 2018 15:25
URI: http://eprints.iisc.ac.in/id/eprint/61026

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