ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Effect of Tilted Magnetic Anisotropy on the Deterministic Current-Induced Magnetization Reversal in Quasi-Perpendicularly Magnetized Ta/Pt/CoFeB/Pt Multilayers

Guddeti, Sreekar and Gopi, Ajesh K and Kumar, PS Anil (2018) Effect of Tilted Magnetic Anisotropy on the Deterministic Current-Induced Magnetization Reversal in Quasi-Perpendicularly Magnetized Ta/Pt/CoFeB/Pt Multilayers. In: IEEE TRANSACTIONS ON MAGNETICS, 54 (11).

[img] PDF
Ieee_tra_Mag_54-11_1500305_2018.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://dx.doi.org/10.1109/TMAG.2018.2850759

Abstract

Deterministic current-induced magnetization reversal is observed in quasi-perpendicularly magnetized Ta/Pt/CoFeB/Pt multilayer thin films without the assistance of an in-plane field. In a quasi-perpendicularly magnetized system, the anisotropy is tilted slightly away from the normal to the film plane. This tilt in the anisotropy is obtained by growing the films in an oblique-angle sputter deposition technique, which results in a gradient in the thickness of the layers. To estimate the tilt, out-of-plane hysteresis loop measurements are performed in the presence of an in-plane bias field. The effect of the tilt is reflected in the shift in the hysteresis loop. A measurement of this shift at different relative azimuthal orientations of the in-plane projection of the tilt direction with respect to the in-plane bias field direction gives a tilt of 0.74 degrees (+/- 0.06 degrees) in Ta(3 nm) Pt(3 nm) CoFeB(0.5 nm) Pt(1 nm) with all the layers having a thickness gradient. In addition, field-induced domain wall velocity measurements in the creep regime on Ta(3 nm) Pt(3 nm) CoFeB(0.5 nm) Pt(1 nm) thin film with a thickness gradient only in CoFeB layer give an elliptical profile for the domain wall. In the current-induced magnetization reversal studies, threshold current density of 1.06 x 10(11) Am-2 is required to deterministically switch the device fabricated from Ta(3 nm) Pt(3 nm) CoFeB(0.5 nm) Pt(1 nm) thin film with all the layers having a thickness gradient. On application of in-plane bias, there is a shift in the threshold current densities given by 2.6 x 10(8) Am-2 of in-plane bias field.

Item Type: Journal Article
Publication: IEEE TRANSACTIONS ON MAGNETICS
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information: Copy right for this article belong to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Domain wall dynamics; Kerr microscopy; tilted anisotropy
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 12 Nov 2018 15:42
Last Modified: 12 Nov 2018 15:42
URI: http://eprints.iisc.ac.in/id/eprint/61020

Actions (login required)

View Item View Item