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High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts

Bhattacharjee, S and Ganapathi, K L and Mohan, S and Bhat, N (2018) High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts. In: 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA.

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Official URL: http://dx.doi.org/10.1109/DRC.2018.8442194
Item Type: Conference Proceedings
Additional Information: 76th Device Research Conference (DRC), Santa Barbara, CA, JUN 24-27, 2018
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 05 Oct 2018 15:07
Last Modified: 05 Oct 2018 15:07
URI: http://eprints.iisc.ac.in/id/eprint/60821

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