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Effect of Se Substitution on the Phase Change Properties of Ge2Sb2Te5

Shekhawat, Roopali and Rangappa, Ramanna and Gopal, E S R and Ramesh, K (2018) Effect of Se Substitution on the Phase Change Properties of Ge2Sb2Te5. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.5032933


Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150 degrees C and not to the stable hexagonal phase which occurs at a high temperature (> 250 degrees C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 01 Sep 2018 14:24
Last Modified: 01 Sep 2018 14:24
URI: http://eprints.iisc.ac.in/id/eprint/60546

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