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Fully solution processed Al-TiO2-Si (MIS) structured Photo-detector

Mondal, Sandip and Kumar, Arvind (2018) Fully solution processed Al-TiO2-Si (MIS) structured Photo-detector. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.5032659

Abstract

We demonstrate the fabrication of a high performance photo detector by fully solution processed technique. The detector is fabricated with photo sensitive, low temperature (200 degrees C) and sol-gel processed titanium dioxide (TiO2) dielectric material on silicon substrate in the form of MIS structure with top aluminum gate. The optical detection experiment is performed on Al-TiO2-Si (MIS) device by measuring the capacitance-voltage (CV at 100 kHz) curve within the visible region of light (365 - 700 nm). The presence of light shift the flat band voltage (V-FB) from 290 mV to 360 mV due to the generation of photo activated charge carriers by UV (365 nm) and white light, respectively. Moreover, the generation of the charge carrier increases drastically by the combination of UV and white, which resulting as a very large shift (600 mV) in the V-FB. The entire experiment was performed in normal lab conditions with open air environment, without any clean room facility.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 01 Sep 2018 14:26
Last Modified: 01 Sep 2018 14:26
URI: http://eprints.iisc.ac.in/id/eprint/60544

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