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Optimization of Process Parameters for RF Sputter Deposition of Tin-Nitride Thin-films

Jangid, Teena and Rao, G Mohan (2018) Optimization of Process Parameters for RF Sputter Deposition of Tin-Nitride Thin-films. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.5032989


Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600 degrees C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 31 Aug 2018 14:45
Last Modified: 31 Aug 2018 14:45
URI: http://eprints.iisc.ac.in/id/eprint/60542

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