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Thermal stability and crystallization kinetics of Bi doped Si15Te85-xBix (0 <= x <= 2) chalcogenide glassy alloys

Fernandes, Brian Jeevan and Munga, Pumlian and Ramesh, K and Udayashankar, N K (2018) Thermal stability and crystallization kinetics of Bi doped Si15Te85-xBix (0 <= x <= 2) chalcogenide glassy alloys. In: International conference on Advanced Materials (SCICON), DEC 19-21, 2016, Coimbatore, INDIA, pp. 16237-16245.

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Official URL: http://dx.doi.org/10.1016/j.matpr.2018.05.115


Bulk Si15Te85-xBix (0 <= x <= 2) chalcogenide glassy alloys were prepared by well-established melt quenching technique. Thermal stability and crystallization kinetics of these alloys were investigated by employing differential scanning calorimetry (DSC) technique at different heating rates, namely, 10, 15, 20 and 25 K/min under nonisothermal condition. Thermal parameters such as glass transition (T-g), onset crystallization (T-c) and peak crystallization (T-p) temperatures were observed. Double crystallization peaks observed in the DSC thermogram refer to the instability and phase separated network in the glasses. Various kinetic parameters such as thermal stability (Delta T), enthalpy (Delta H-c), entropy (Delta(s)), specific heat (Delta C-p) and fragility index are deduced. The calculated kinetic parameters suggest that the stability of glassy samples decreases with the increase in Bi addition. The activation energies of glass transition (E-g), and crystallization (E-c) were calculated using relevant kinetic formulae. We further discuss on the kinetics of the synthesized materials relevant for their applications in phase change memory (PCM) material (C) 2017 Elsevier Ltd. All rights reserved.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 31 Aug 2018 14:46
Last Modified: 31 Aug 2018 14:46
URI: http://eprints.iisc.ac.in/id/eprint/60539

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