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Microwave-Synthesized NiO as a Highly Sensitive and Selective Room-Temperature NO2 Sensor

Benedict, Samatha and Singh, Monika and Naik, T R Ravikumar and Shivashankar, S A and Bhat, Navakanta (2018) Microwave-Synthesized NiO as a Highly Sensitive and Selective Room-Temperature NO2 Sensor. In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7 (7). Q3143-Q3147.

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Official URL: http://dx.doi.org/10.1149/2.0211807jss

Abstract

In this work, we report microwave-assisted deposition of NiO for application as room-temperature NO2 sensor. The synthesis conditions are varied to arrive at the optimum film for sensing NO2. The optimum NiO film shows response of 4991% at 3 ppm NO2 at room temperature with short response and recovery times of 30 s and 45 s, respectively. X-ray diffraction reveals the cubic structure of the NiO film with slightly preferred orientation and scanning electron microscopy shows high porosity in the film, both contributing to the enhanced sensing performance. The microwave-synthesized NiO shows an order of magnitude stronger response to NO2 (3 ppm) at room temperature operation than does optimized, DC-reactive-sputtered NiO operating at 175 degrees C. To the best of our knowledge, this is the first report on room temperature detection of NO2 by a microwave-synthesized NiO film. The detection limit of the NiO film is 200 ppb with good selectivity against interfering gases. The sensor demonstrates an ultra-low power consumption of 0.2 mu W, making it suitable for solar-powered pollution-monitoring. (C) The Author(s) 2018. Published by ECS.

Item Type: Journal Article
Additional Information: Copy right for this article belong to ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 31 Aug 2018 14:47
Last Modified: 31 Aug 2018 14:47
URI: http://eprints.iisc.ac.in/id/eprint/60537

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