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Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector

Goel, Neeraj and Kumar, Rahul and Roul, Basanta and Kumar, Mahesh and Krupanidhi, S B (2018) Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (37).

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Official URL: http://dx.doi.org/ 10.1088/1361-6463/aad4e8


Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2/GaN photodetector. Our device shows high external spectral responsivity (similar to 10(3) A W-1) and detectivity (similar to 10(11) Jones) with a very fast response time (similar to 5ms). Our obtained results are significantly better than previous MoS2- and GaN-based photodetectors. This work unveils a new perspective in MoS2/GaN heterojunctions for high-performance optoelectronic applications.

Item Type: Journal Article
Additional Information: Copy right for this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 27 Aug 2018 14:57
Last Modified: 27 Aug 2018 14:57
URI: http://eprints.iisc.ac.in/id/eprint/60503

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