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Wafer-scale epitaxial germanium (100), (111), (110) films on silicon using liquid phase crystallization

Chaurasia, Saloni and Mohan, Nagaboopathy and Raghavan, Srinivasan and Avasthi, Sushobhan (2018) Wafer-scale epitaxial germanium (100), (111), (110) films on silicon using liquid phase crystallization. In: AIP ADVANCES, 8 (7).

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Official URL: http://dx.doi.org/10.1063/1.5033324

Abstract

A wafer-scale method to obtain epitaxial germanium (Ge) on crystalline silicon (Si) using liquid-phase-crystallization (LPC) is presented. The technique provides a simple yet versatile method to grow epitaxial germanium on silicon with any crystallographic orientation: (100), (110) or (111). The process starts with amorphous Ge, which is melted and cooled in a controlled manner to form epitaxial germanium. LPC Ge films are continuous with an average grain-size of 2-5 mu m. Rocking scan confirms that the LPC Ge is oriented with a threading dislocation density of similar to 109 cm(-2). The phi-scan confirms that LPC germanium is epitaxial with Ge (100), Ge (110) and Ge (111) showing four-fold, two-fold, and three-fold symmetry, respectively. The epitaxial quality of the Ge is influenced by the cleanliness of the Ge/Si interface; rate of cooling and ambient gas during LPC; and Ge layer thickness. Best films are obtained for 1 mu m thick LPC Ge(100), cooled at similar to 3-4 C/min in hydrogen ambient. Electron Hall mobility in these LPC Ge films is 736cm(2)/Vs, a high value that confirms the electronic quality of LPC Ge film. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

Item Type: Journal Article
Additional Information: Copy right for this article belong to AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAAMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 23 Aug 2018 16:00
Last Modified: 23 Aug 2018 16:00
URI: http://eprints.iisc.ac.in/id/eprint/60487

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