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Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer

Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).

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Official URL: https://dx.doi.org/10.1088/1361-6641/aad2bb

Abstract

A buried channel normally-off AlGaN/GaN MOS-HEMT with gate recess etching is reported. The buried channel operation is achieved by in situ doping of GaN to introduce a p-n junction in the GaN buffer. The fabricated buried channel MOS-HEMT with 12.5 nm atomic layer deposition (ALD) Al2O3 gate dielectric featured a threshold voltage of 1.3 V with a drain saturation current of 287 mA mm(-1) for a device with 3.5 mu m long gate length and 11 mu m sourcedrain spacing. The field effect mobility improved from 25 cm(2)/Vs for a reference device to 142 cm(2)/Vs for the buried channel device. Due to the presence of the p-n junction depletion region in the GaN buffer, the leakage in the off state decreased by about 4 orders of magnitude (4 nA mm(-1) compared to 76 uA mm(-1) for the reference device). The buried channel device also gives better breakdown characteristics, with a breakdown voltage of 158 V compared to 98 V for the reference device.

Item Type: Journal Article
Additional Information: Copyright of this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Electrical Sciences > Electrical Communication Engineering
Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 20 Aug 2018 15:36
Last Modified: 25 Feb 2019 11:19
URI: http://eprints.iisc.ac.in/id/eprint/60464

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