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Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD

Zhu, Peipei and Yang, Meijun and Xu, Qingfang and Sun, Qingyun and Tu, Rong and Li, Jun and Zhang, Song and Li, Qizhong and Zhang, Lianmeng and Goto, Takashi and Shi, Ji and Li, Haiwen and Ohmori, Hitoshi and Kosinova, Marina and Basu, Bikramjit (2018) Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD. In: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 101 (9). pp. 3850-3856.

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Official URL: https://dx.doi.org/10.1111/jace.15557


Epitaxial 3C-SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 m/h, respectively. The activation energy of 3C-SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w similar to h(0.31) and w similar to h(0.06), respectively. The growth mechanisms of epitaxial 3C-SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

Item Type: Journal Article
Additional Information: Copyright of this article belong to WILEY, 111 RIVER ST, HOBOKEN 07030-5774, NJ USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 23 Jul 2018 15:42
Last Modified: 11 Oct 2018 12:54
URI: http://eprints.iisc.ac.in/id/eprint/60269

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