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Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties

Bhat, Shwetha G and Gauquelin, N and Sebastian, Nirmal K and Sil, Anomitra and Beche, A and Verbeeck, J and Samal, D and Kumar, P S Anil (2018) Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties. In: EPL, 122 (2).

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Official URL: https://dx.doi.org/10.1209/0295-5075/122/28003

Abstract

Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk ``6H-type'' structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018

Item Type: Journal Article
Additional Information: Copyright of this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 04 Jul 2018 14:42
Last Modified: 04 Jul 2018 14:42
URI: http://eprints.iisc.ac.in/id/eprint/60152

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