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Field Effect Transistor Based on Layered NiPS3

Jenjeti, Ramesh Naidu and Kumar, Rajat and Austeria, Muthu P and Sampath, S (2018) Field Effect Transistor Based on Layered NiPS3. In: SCIENTIFIC REPORTS, 8 .

Sci_Rep_8_8586_2018.pdf - Published Version

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Official URL: https://www.nature.com/articles/s41598-018-26522-1


Layered metal phosphochalcogenides of molecular formula, MPX3(M = Mn, Fe,Co, Ni,etc and X = S, Se) have been emerging as new class of semiconductors towards various catalytic and optoelectronic applications. The low cleavage energy associated with these layered chalcogenides may lead to devices with very thin semiconductor channels. Herein, we report the first successful fabrication of field effect transistor (FET) using layered NiPS3 that reveals n-type semiconducting behavior. Devices using bulk and few-layer NiPS3 with gold contacts show on/off ratios of -10(3)-10(5) at 25 degrees C. The device characteristics reveal an increase in on-state current with decrease in threshold voltage and the Schottky barrier height is extracted to be 112 meV. Density functional theory calculations reveal various parameters that affect electron/hole doping in the layered phosphochalcogenide material.

Item Type: Journal Article
Additional Information: Copy right of this article belong to NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre: Division of Chemical Sciences > Inorganic & Physical Chemistry
Depositing User: Id for Latest eprints
Date Deposited: 25 Jun 2018 15:52
Last Modified: 03 Oct 2018 14:43
URI: http://eprints.iisc.ac.in/id/eprint/60083

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