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Electrical Behaviour of Fully Solution Processed HfO2 (MOS) in Presence of Different light illumination

Mondal, Sandip (2018) Electrical Behaviour of Fully Solution Processed HfO2 (MOS) in Presence of Different light illumination. In: 62nd DAE Solid State Physics Symposium, DEC 26-30, 2017, Mumbai, INDIA.

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Official URL: https://dx.doi.org/10.1063/1.5028777

Abstract

This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of +/- 5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

Item Type: Conference Proceedings
Additional Information: Copy right of this article belong to AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 19 Jun 2018 14:46
Last Modified: 19 Jun 2018 14:46
URI: http://eprints.iisc.ac.in/id/eprint/60058

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