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On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors

Bhat, SV (2018) On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors. In: JOURNAL OF APPLIED PHYSICS, 123 (16).

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Official URL: http://dx.doi.org/ 10.1063/1.4990497


The paper investigates the magnetic behavior of chromium doped SnO2 Dilute Magnetic Semiconductor (DMS) nanoparticles, through structural, spectroscopic, and magnetic studies. A non-equilibrium solution combustion method is adopted to synthesize 0-5 at. % Cr doped SnO2 nanoparticles. The detailed spectroscopic studies on the system using micro-Raman spectroscopy, x-ray photoelectron spectroscopy, and electron paramagnetic resonance spectroscopy along with the structural analysis confirm the presence of Cr in 3+ oxidation state, which substitutes at Sn4+ site in SnO6 octahedra of the rutile structure. This doping is found to enhance the defects in the system, i.e., oxygen vacancies. All the synthesized SnO2 nanoparticles (with or without dopants) are found to exhibit Room Temperature Ferromagnetism (RTFM). This occurrence of RTFM is attributed to the magnetic exchange interaction through F-centers of oxygen vacancies as well as dopant magnetic impurities and explained through the Bound Magnetic Polaron (BMP) model of DMS systems. Nonetheless, as the doping of Cr is further increased beyond 2%, the solubility limit is achieved. This antiferromagnetic exchange interaction from interstitial Cr dopants dominates over the BMP mechanism and, hence, leads to the decrease in the net magnetic moment drastically. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belong to AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 23 May 2018 14:54
Last Modified: 25 Feb 2019 11:23
URI: http://eprints.iisc.ac.in/id/eprint/59924

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