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Evidence of Bipolar Resistive Switching Memory in Perovskite Solar Cell

Landi, Giovanni and Subbiah, Vijaya and Reddy, K Srinivas and Sorrentino, Andrea and Sambandam, Anandan and Ramamurthy, Praveen C and Neitzert, Heinz-Christoph (2018) Evidence of Bipolar Resistive Switching Memory in Perovskite Solar Cell. In: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 6 (1). pp. 454-463.

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Official URL: http://dx.doi.org/10.1109/JEDS.2018.2820319


In hybrid inorganic-organic perovskite solar cells a very stable bipolar resistive switching behavior in the dark current-voltage characteristics at low-voltages has been observed. The possible use of the solar cell as an electrical memory with a moderate on-off contrast but very good stability over a prolonged time has been suggested. The reversible behavior and the long dynamics during the write/erase processes indicate that the physical mechanism behind the switching is related to polarization effects. A detailed analysis of the charge carrier trapping/detrapping, transport, and recombination mechanisms has been performed by taking the ion migration and the consequent charge carrier accumulation within the device into account. The charge transport during the write operation can be described by space-charge-limited conduction process. The formation and subsequent interruption of conducting pathways due to ion migration have been identified as the main cause of the resistive switching within the perovskite material. The strong interaction between the ion movement and the electron transport enables the operation of the perovskite solar cell also as a non-volatile memory.

Item Type: Journal Article
Additional Information: Copy right for this article belong to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Id for Latest eprints
Date Deposited: 07 May 2018 19:01
Last Modified: 07 May 2018 19:01
URI: http://eprints.iisc.ac.in/id/eprint/59774

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