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Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications

Ameer, Zoobia and Monteduro, Anna Grazia and Rizzato, Silvia and Caricato, Anna Paola and Martino, Maurizio and Lekshmi, I C and Hazarika, Abhijit and Choudhury, Debraj and Mazzotta, Elisabetta and Malitesta, Cosimino and Tasco, Vittorianna and Sarma, D D and Maruccio, Giuseppe (2018) Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 29 (9). pp. 7090-7098.

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Official URL: http://dx.doi.org/10.1007/s10854-018-8696-x


The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses.

Item Type: Journal Article
Additional Information: Copy right for this article belong to SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Depositing User: Id for Latest eprints
Date Deposited: 04 May 2018 18:49
Last Modified: 04 May 2018 18:49
URI: http://eprints.iisc.ac.in/id/eprint/59695

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