ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

High performance printed oxide field-effect transistors processed using photonic curing

Garlapati, Suresh Kumar and Marques, Gabriel Cadilha and Gebauer, Julia Susanne and Dehm, Simone and Bruns, Michael and Winterer, Markus and Tahoori, Mehdi Baradaran and Aghassi-Hagmann, Jasmin and Hahn, Horst and Dasgupta, Subho (2018) High performance printed oxide field-effect transistors processed using photonic curing. In: NANOTECHNOLOGY, 29 (23).

[img] PDF
Nan_Chi_29_23_2018.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://dx.doi.org/10.1088/1361-6528/aab7a2

Abstract

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Item Type: Journal Article
Additional Information: Copy right for this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Id for Latest eprints
Date Deposited: 04 May 2018 18:50
Last Modified: 04 May 2018 18:50
URI: http://eprints.iisc.ac.in/id/eprint/59681

Actions (login required)

View Item View Item